Growth dynamics and optimization of Ga(In)AsN/GaAs towards 1.3 μm and 1.55 μm

Journal article

Peer reviewed

S. Z Wang, S. F Yoon, T. K NG, W. K Loke and W. J Fan

Applied physics. A, Materials science & processing, Vol.80(3), pp.631-635

01/02/2005

Abstract

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Materials science

Methods of deposition of films and coatings; film growth and epitaxy

Physics

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Title: Growth dynamics and optimization of Ga(In)AsN/GaAs towards 1.3 μm and 1.55 μm
Creators - without role: S. Z Wang - Nanyang Technological University
S. F Yoon - Nanyang Technological University
T. K NG - Nanyang Technological University
W. K Loke - Nanyang Technological University
W. J Fan - Nanyang Technological University
Publication Details: Applied physics. A, Materials science & processing, Vol.80(3), pp.631-635
Publisher: Springer
Identifiers: 9941130108331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article