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Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
Journal article   Peer reviewed

Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy

Daisuke Iida, Kensuke Nagata, Takafumi Makino, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Akira Bandoh and Takashi Udagawa
Applied physics express, Vol.3(7), pp.075601-075601-2
07/2010
DOI: https://doi.org/10.1143/APEX.3.075601

Abstract

Physical Sciences Physics Physics, Applied Science & Technology
GaInN films with different In compositions were grown using a raised-pressure metalorganic vapor phase epitaxy (MOVPE) system operated from 100 to 200 kPa. A precise X-ray diffraction study showed that the In composition increases with an increasing pressure during growth, which is consistent with the result of a thermodynamic analysis. (C) 2010 The Japan Society of Applied Physics

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