- Title
- Growth of Semiconducting GaN Hollow Spheres and Nanotubes with Very Thin Shells via a Controllable Liquid Gallium-Gas Interface Chemical Reaction
- Creators - without role
- Long-Wei Yin - Advanced Materials Laboratory, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan, Fax: (+81) 029-851-6280Yoshio Bando - National Institute for Materials ScienceMu-Sen Li - Shandong UniversityDmitri Golberg - National Institute for Materials Science
- Publication Details
- Small (Weinheim an der Bergstrasse, Germany), Vol.1(11), pp.1094-1099
- Publisher
- WILEY-VCH Verlag
- Number of pages
- 6
- Identifiers
- 9947400708331
- Academic Unit
- King Saud University
- Language
- English
- Resource Type
- Journal article
Journal article
Growth of Semiconducting GaN Hollow Spheres and Nanotubes with Very Thin Shells via a Controllable Liquid Gallium-Gas Interface Chemical Reaction
Small (Weinheim an der Bergstrasse, Germany), Vol.1(11), pp.1094-1099
11/2005
PMID: 17193402
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