Abstract
We report on the growth of unidirectional InN micropyramids by using a simple pattern-free epitaxial technique. These pyramids were grown on a GaN layer deposited on sapphire via metalorganic chemical vapor deposition (MOCVD). The XRD full width at half maximum (FWHM) was observed to be as low as 0.16 degrees for the InN (0002) omega rocking curve which indicates very good crystal quality of these InN pyramids. The Photoluminescence (PL) emission of InN micropyramids is, similar to 0.78 eV. The dependency on growth conditions of pyramid density, facet stabilization, and pyramid structural quality have been evaluated and discussed. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim