Abstract
We succeeded in growing high-crystalline-quality thick (10 (1) over bar(1) over bar) Ga0.92In0.08N films on a grooved (10 (1) over bar(1) over bar) GaN/(10 (1) over bar(2) over bar) 4H-SiC underlying layer. We also fabricated GaInN/GaN multiple quantum wells (MQWs) with a peak wavelength of 580 nm on a high-crystalline-quality thick GaInN film. The photoluminescence intensity of the MQWs is about six times higher than that of MQWs grown on planar GaN and twice as high as that of MQWs grown on a GaN underlying layer having the same grooved structure. (C) 2009 Elsevier B.V. All rights reserved.