Abstract
Three-dimensional flower-like SnS2 was grown on a g-C3N4 sheet by a facile solvothermal process. The internal photophysical characteristics, and surface behavior of the well-designed SnS2-g-C3N4 heterostructure were characterized systematically using a range of standard spectroscopic techniques. The visible light responsive characteristics towards the degradation of a model organic pollutant were assessed by the degradation of RhB dye under visible light illumination and the results showed that the SnS2-g-C3N4 heterostructure has a larger photodegradation ability compared to the pure g-C3N4 and SnS2 as well as a similar heterostructure prepared by a physical stirring method. The electrochemical supercapacitance performance of the designed SnS2-g-C3N4 heterostructure was assessed by galvanic charge discharge (GCD) measurements in a half-cell assembly system. The SnS2-g-C3N4 heterostructure exhibited superior electrochemical performance with a higher specific capacitance and cycling stability than those of the bare materials and a similar heterostructure (SnS2-g-C3N4-Pm) prepared by a different method. The superior performance was attributed mainly to the narrow band gap energy of both constituents, high surface area, unique 3D structure, interfacial transportation of charge carriers, fewlayered nature, capacitive behavior, and nitrogen-rich skeleton.