Growth of vanadium-doped GaN by MOVPE

Journal article

Peer reviewed

M Souissi, A Bchetnia and B EL JANI

Journal of crystal growth, Vol.277(1-4), pp.57-63

15/04/2005

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Iii-v semiconductors

Materials science

Methods of deposition of films and coatings; film growth and epitaxy

Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation

Photoluminescence

Physics

Vapor phase epitaxy; growth from vapor phase

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Title: Growth of vanadium-doped GaN by MOVPE
Creators - without role: M Souissi - University of Monastir
A Bchetnia - University of Monastir
B EL JANI - University of Monastir
Publication Details: Journal of crystal growth, Vol.277(1-4), pp.57-63
Publisher: Elsevier
Identifiers: 9929167308331
Academic Unit: Qassim University
Language: English
Resource Type: Journal article