Abstract
The deposition process of IV- VI semiconductors is studied in order to determine optimal conditions of evaporation. A thermodynamical model of the growth is proposed and its use explained in HWE applications. Using these results, epitaxial thin films have been achieved on BaF2 and Si substrates in all the composition range from PbSe to PbTe. The epilayers obtained were then characterized by Xray diffraction, Auger spectroscopy, SEM observations and electrical measurements. An optical study from 4.2 to 300K is finally presented and the energy band gap dependence versus composition and temperature has been established.