Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates

Journal article

Peer reviewed

Nicolas Chauvin, M. Hadj Alouane, R. Anufriev, H. Khmissi, K. Naji, G. Patriarche, C. Bru-Chevallier and M. Gendry

Applied physics letters, Vol.100(1), pp.011906-011906-4

02/01/2012

Abstract

Condensed Matter

Materials Science

Physics

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Title: Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates
Creators - without role: Nicolas Chauvin - INL - Spectroscopies et Nanomatériaux
M. Hadj Alouane - INL - Spectroscopies et Nanomatériaux
R. Anufriev - INL - Spectroscopies et Nanomatériaux
H. Khmissi - INL - Hétéroepitaxie et Nanostructures
K. Naji - INL - Hétéroepitaxie et Nanostructures
G. Patriarche - Laboratoire de Photonique et de Nanostructures
C. Bru-Chevallier - INL - Spectroscopies et Nanomatériaux
M. Gendry - INL - Hétéroepitaxie et Nanostructures
Publication Details: Applied physics letters, Vol.100(1), pp.011906-011906-4
Publisher: American Institute of Physics
Identifiers: 9919175308331
Academic Unit: Northern Borders University
Language: English
Resource Type: Journal article