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Half-Heusler compounds with a 1 eV (1.7 eV) direct band gap, lattice-matched to GaAs (Si), for solar cell application: A first-principles study
Journal article   Peer reviewed

Half-Heusler compounds with a 1 eV (1.7 eV) direct band gap, lattice-matched to GaAs (Si), for solar cell application: A first-principles study

N. Belmiloud, F. Boutaiba, A. Belabbes, M. Ferhat and F. Bechstedt
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol.253(5), pp.889-894
01/05/2016

Abstract

Physical Sciences Physics Physics, Condensed Matter Science & Technology

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