Abstract
We produced a graphene oxide with good conductivity by a novel method that saves cost and time as illustrated in the structure Au/GO/TiO
2
/Si/Al. The GO was synthesized by burning polyvinyl alcohol at 300 °C on the TiO
2
/n-Si surface producing a conductive graphene oxide that is considered a new advantage of this technique. The Au/GO/TiO
2
/n-Si/Al structure is manufactured using the spin coating process. The XRD and SEM identified the samples’ structure and surface topography. In a frequency range from 10 kHz to 20 MHz, the electrical and dielectric parameters of the synthetic Schottky diodes were obtained from capacitance/conductance-voltage. The diagram of real and imaginary parts of the impedance (Z′, Z″), col-col, and their variation with temperatures, voltage, and frequency were also discussed. A comparison of electrical parameters such as ideality factor (n), series resistance (R
s
), barrier height (Φ
b
) based on traditional, Cheung, and Norde methods was investigated. The oxide layer thickness values (d
ox
), the density distribution (N
ss
), the maximum admittance (Y
m
), the maximum electric field (E
m
), the depletion layer width (W
d
), and ΔΦ
b
(eV) were investigated using the C
2
− V relationship. As the frequency increases, the Φ
b(C−V)
increases, while the concentration of donor atoms (N
D
) decreases. The surface states (N
ss
) voltage-dependent profile was calculated and evaluated.