Abstract
Current studies stipulate that the performance efficiency of photovoltaic cells can be increased by incorporating a tandem architecture into the device configuration. This work includes an assessment of the photovoltaic performance parameters and optimization of the cesium lead iodide (CsPbI3)-silicon (Si) tandem solar cells (TSC) by applying the SCAPS 1D tool. The two terminal (2-T) monolithic TSC device configuration with a top CsPbI3 perovskite solar cell (PSC) consisting of IGZO as the electron transport layer material (ETL) and CuSbS2 as the hole transport layer material (HTL) and a bottom c-Si solar cell exhibits a fill factor (FF) and power conversion efficiency (PCE) of 73.16% and 27.07%, respectively, by establishing the current matching condition, while in the four terminal (4-T) stacked layer configuration, the device exhibits a PCE of 30.68%. The device acquires this high PCE after the optimization of the thickness, dopant density, and defect density of the perovskite light active material and Si.