High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 degrees C

Journal article

Peer reviewed

Yen-Hung Lin, Hendrik Faber, Kui Zhao, Qingxiao Wang, Aram Amassian, Martyn McLachlan and Thomas D. Anthopoulos

Advanced materials (Weinheim), Vol.25(31), pp.4340-4346

21/08/2013

PMID: 23798486

Abstract

Chemistry

Chemistry, Multidisciplinary

Chemistry, Physical

Materials Science

Materials Science, Multidisciplinary

Nanoscience & Nanotechnology

Physical Sciences

Physics

Physics, Applied

Physics, Condensed Matter

Science & Technology

Science & Technology - Other Topics

Technology

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Title: High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 degrees C
Creators - without role: Yen-Hung Lin - Imperial College London
Hendrik Faber - Imperial College London
Kui Zhao - King Abdullah University of Science and Technology
Qingxiao Wang - King Abdullah University of Science and Technology
Aram Amassian - King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia
Martyn McLachlan - Imperial College London
Thomas D. Anthopoulos - Imperial College London
Publication Details: Advanced materials (Weinheim), Vol.25(31), pp.4340-4346
Publisher: Wiley
Number of pages: 7
Grant note: 280221 / European Research Council (ERC) AMPRO; European Research Council (ERC) 735 / Dutch Polymer Institute (DPI) S-PLORE
Identifiers: 9941351908331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article