- Title
- High Quality p+-n+-GaAs Tunnel Junction Diode Grown by Atmospheric Pressure Metalorganic Vapour Phase Epitaxy
- Creators - without role
- L. Beji - University of MonastirB. el Jani - University of MonastirP. Gibart - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
- Publication Details
- Physica status solidi. A, Applied research, Vol.183(2), pp.273-279
- Publisher
- WILEY-VCH Verlag Berlin GmbH
- Number of pages
- 7
- Identifiers
- 9928412108331
- Academic Unit
- Qassim University
- Language
- English
- Resource Type
- Journal article
Journal article
High Quality p+-n+-GaAs Tunnel Junction Diode Grown by Atmospheric Pressure Metalorganic Vapour Phase Epitaxy
Physica status solidi. A, Applied research, Vol.183(2), pp.273-279
02/2001
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