Abstract
WO 3 /In 2 O 3 nanocluster (NC) was successfully synthesized by using GLAD technique consolidated within an electron beam evaporator system. The crystalline structure of WO 3 /In 2 O 3 NC was investigated by X-Ray Diffraction and the crystallite size was found to be ~ 29.28 nm. The device exhibited an excellent responsivity, detectivity, external quantum efficiency and noise equivalent power of 290.49 A/W, 5.97\times 10^{13} Jones, 9.99\times 10^{4} %, and 7.04\times 10^{\mathrm {-14}}\text{W} at 360 nm respectively. In addition, the device showed rise time/fall time of 0.89 s/0.81s at +3V. The obtained parameters are superior to the reported GLAD synthesized pristine In 2 O 3 and WO 3 nanostructures. The significant enhancement in WO 3 /In 2 O 3 NC device is attributed to the efficient charge carrier separations which lead to the reduction in the electron hole pair recombination. Thus, the overall result provides a novel approach for the synthesis of proficient NC for photodetector application.