Sign in
High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative
Journal article   Peer reviewed

High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative

Wentao Huang, Yen-Hung Lin and Thomas D Anthopoulos
ACS applied materials & interfaces, Vol.10(12), pp.10202-10210
28/03/2018
PMID: 29533061

Abstract

UV photodetector fullerenes PCBM ambipolar transport phototransistor

Metrics

1 Record Views

Details