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High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate
Journal article   Peer reviewed

High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate

Takayuki Sugiyama, Hiroshi Amano, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama and Isamu Akasaki
JAPANESE JOURNAL OF APPLIED PHYSICS, Vol.50(1), pp.01AD03-01AD03-3
01/01/2011
DOI: https://doi.org/10.1143/JJAP.50.01AD03

Abstract

Physical Sciences Physics Physics, Applied Science & Technology
We demonstrated the high-temperature operation of normally off-mode heterostructure field-effect transistors (HFETs) with a p-GaN gate. The HFETs with a p-GaN gate were operated in the normally off mode at 350 degrees C. The temperature dependence of their performance was compared with the results of simulation. (C) 2011 The Japan Society of Applied Physics

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