Abstract
A theoretical study of the two-dimensional hole gas at the (AgO)(-)/(TiO2)(0) p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (similar to 4.9 angstrom) with a considerable carrier density of similar to 10(14)cm(-2). We estimate a hole mobility of 18.6 cm(2) V-1 s(-1), which is high enough to enable device applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4719106]