Abstract
A high-performance enhancement-mode charge plasma based gallium nitride (CP-GaN) MOSFET is stimulated. Here, metals of same work functions are used to induce n-type charge plasma in an undoped GaN film to realise source and drain regions of a GaN MOSFET. The proposed device is not hetrostructure like the conventional GaN/AlGaN devices and is hence free from hetero-epitaxial defects and inverse piezoelectric effects, and can have reduced leakage and can be more reliable. An extensive simulation study has revealed that the proposed CP-GaN device exhibits a threshold voltage of 1.4 V, large ION/IOFF ratio of 108 and transconductance (gm) of 308 mS/mm.