High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment (vol 100, 202106, 2012)

Journal article

Open access

Peer reviewed

Applied physics letters, Vol.105(24)

15/12/2014

Abstract

Physical Sciences

Physics

Physics, Applied

Science & Technology

url

https://doi.org/10.1063/1.4902402View

Published (Version of record) Open

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Title: High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment (vol 100, 202106, 2012)
Creators - without role: Pradipta K. Nayak - King Abdullah University of Science and Technology
M. N. Hedhili - King Abdullah University of Science and Technology
Dongkyu Cha - King Abdullah University of Science and Technology
H. N. Alshareef - King Abdullah University of Science and Technology
Publication Details: Applied physics letters, Vol.105(24)
Publisher: Amer Inst Physics
Number of pages: 1
Identifiers: 9941432508331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article