Abstract
Herein, we present the results of high-performance visible light photodetector fabricated from the grown TlGaSSe single crystal for the first time. The growth direction was found to be (1 0 0) and layered structure was confirmed by scanning electron microscope (SEM) micrograph. The photocurrent observed to be increased with increasing the light intensity and voltage. The photo responsitivity (R), detectivity (D) and external quantum efficiency (EQE) were studied for the fabricated device. The maximum value of R is found to be similar to 980 mA V-1. The D value shows a decrease with increasing the light intensity and found in a range of 4.41 x 10(11) to 8.48 x 10(10) Jones. Further, the maximum value of EQE was found similar to 193% at a light intensity of 10 mu W cm(2). Photoswitching behavior of the device was also studied and displayed that the ratio of on and off photo values similar to 45:100. The values of growth and decay time were found to be similar to 218 and 185 ms, respectively. (C) 2019 Elsevier B.V. All rights reserved.