Abstract
A high-power AlGaInP laser diode with current-injection-free region near the facet is successfully fabricated by metaorganic chemical vapor deposition (MOCVD) using the (100) direction
substrates with a misorientation of
toward the (011) direction. The maximum continuous wave output power is about
for the traditional structure. In comparison, the maximum output power is enhanced by about 67 , and achieves
for LDs with current-infection-free regions. The fundamental transverse-mode operation is obtained up to
. Output characteristics at high temperatures are also improved greatly for an LD with a current-injection-free region, and the highest operation temperature is
at
without kink. The threshold current is about
, the operation current and the slope efficiency at
are
and
, respectively. The lasing wavelength is
at room-temperature
.