Abstract
This paper gives a detailed report on the tunability of optical gain characteristics of type-I n-Al0.45Ga0.55As/GaAs0.84P0.16/P-Al0.45Ga0.55As nano-scale hetrostructure under the external pressures applied along [001] and [100] directions. In order to find the carriers wavefunctions, their localizations and sub-band dispersions in the heterostrcuture, a 6 x 6 K-L Hamiltonian was solved. In addition, the optical and momentum matrix elements were also calculated followed by the calculation of TE and TM optical gain under the applied pressure along [001] and [100] directions. According to the quantitative analysis of the simulated results, it can be suggested that the application of external pressure along [001] direction within TE mode is one of the preferable approaches for the efficient improvement in the gain characteristics of the n-Al0.45Ga0.55As/GaAs0.84P0.16/p-Al0.45Ga0.55As nano-scale hetrostructure based laser performance in the NIR (near ifrared region).