High resolution LAPS and SPIM

Li Chen; Yinglin Zhou; Shihong Jiang; Julia Kunze; Patrik Schmuki; Steffi Krause

doi:10.1016/j.elecom.2010.03.026

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Journal article

Peer reviewed

High resolution LAPS and SPIM

Li Chen, Yinglin Zhou, Shihong Jiang, Julia Kunze, Patrik Schmuki and Steffi Krause

Electrochemistry communications, Vol.12(6), pp.758-760

01/06/2010

DOI: https://doi.org/10.1016/j.elecom.2010.03.026

Abstract

Anodic oxide

High resolution potential and impedance measurements

LAPS

SPIM

Two-photon effect

The resolution of photocurrent measurements at field-effect capacitors as used in light-addressable potentiometric sensors (LAPS) and scanning photo-induced impedance microscopy (SPIM) has been investigated using silicon on sapphire (SOS) substrates illuminated at different wavelengths. Using a two-photon effect in silicon ( λ = 1250 nm) to generate the photocurrent, genuine submicrometer resolution has been demonstrated for LAPS and SPIM. Improved sensitivity for both LAPS and SPIM was obtained using a 6.7 nm thick gate oxide on SOS anodically grown in 0.1 M HCl.

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Details

Title: High resolution LAPS and SPIM
Creators - without role: Li Chen - Queen Mary University of London
Yinglin Zhou - Queen Mary University of London
Shihong Jiang - Queen Mary University of London
Julia Kunze - Surface
Patrik Schmuki - Surface
Steffi Krause - Queen Mary University of London
Publication Details: Electrochemistry communications, Vol.12(6), pp.758-760
Publisher: Elsevier B.V
Identifiers: 9938075708331
Academic Unit: King Abdulaziz University
Language: English
Resource Type: Journal article