Abstract
InAs layers were grown with and without bismuth flow by atmospheric pressure metalorganic vapor phase epitaxy on exactly oriented, 2 degrees and 10 degrees misoriented (1 0 0) GaAs substrates. Structural analysis was carried out using high resolution X-ray diffraction. Without bismuth flow, only InAs layers grown on 10 degrees misoriented substrates exhibit a mosaic structure. Layers grown on exactly oriented and 2 degrees misoriented substrates show large full widths at half maxima of their diffraction rocking curves. Growing InAs under bismuth flow leads to the reduction of this full width indicating a clear improvement of their structural quality. Particularly for samples grown on 10 degrees misoriented substrates, a complete disappearance of the mosaic structure was obtained. The crystalline quality improvement is attributed to the contribution of Bi nanodots in relieving strain. (C) 2012 Elsevier B.V. All rights reserved.