Abstract
The √3 × √3R30° reconstructed surface of 6H-SiC(0001) was exposed to N2O from 10L to ∼106L at sample temperatures ranging from 500 to 800°C. The Si 2p emission spectra showed fast oxide formation for the first 10L of N2O exposure and thicker oxide layer were formed at higher sample temperature. The valence band spectra at different exposures did not change much, which may denote saturation of the formed oxide layer. The deconvolution of the Si 2p spectra revealed four oxidation states: Si4+; Si3+; Si2+; and Si+.