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High sensitivity extended gate effect transistor based on V2O5 nanorods
Journal article   Peer reviewed

High sensitivity extended gate effect transistor based on V2O5 nanorods

N. M. Abd-Alghafour, Naser M. Ahmed, Z. Hassan, Munirah Abdullah Almessiere, M. Bououdina and Naif H. Al-Hardan
Journal of materials science. Materials in electronics, Vol.28(2), pp.1364-1369
01/01/2017

Abstract

Engineering Engineering, Electrical & Electronic Materials Science Materials Science, Multidisciplinary Physical Sciences Physics Physics, Applied Physics, Condensed Matter Science & Technology Technology

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