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High temperature lambda similar to 4 mu m In0.7Ga0.3As/In0.34Al0.66As quantum cascade lasers grown by MOVPE
Journal article   Peer reviewed

High temperature lambda similar to 4 mu m In0.7Ga0.3As/In0.34Al0.66As quantum cascade lasers grown by MOVPE

D. G. Revin, K. Kennedy, J. P. Commin, Y. Qiu, T. Walther, J. W. Cockburn and A. B. Krysa
Electronics letters, Vol.47(9), pp.559-561
28/04/2011
DOI: https://doi.org/10.1049/el.2011.0656

Abstract

Engineering Engineering, Electrical & Electronic Science & Technology Technology
Reported is the development of lambda similar to 4 mu m highly strain-compensated In0.7Ga0.3As/In0.34Al0.66As/InP quantum cascade lasers grown by metal organic vapour phase epitaxy. 10 mu m-wide and 3 mm-long devices with as-cleaved facets deliver more than 2.4 W of peak optical power from both facets at 300 K with threshold current density of 2.5 kA/cm(2). The lasers operate up to at least 400 K with characteristic temperature of 153 K.

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