Abstract
The combination of block copolymer (BCP) and nanoimprint lithography (NIL) presents a novel and cost-effective approach to achieve sub-50 nm patterning resolution. Through this study, the authors,demonstrate the placement of a few Au nanoparticles per hole using capillary force assembly (CFA). Polystyrene block poly(dimethylsiloxane) (PS-b-PDMS) with spherical morphology is used as etching mask, which is then transferred into Si by a plasma etching. Si posts with similar to 35 nm of diameter, similar to 55 nm of height and similar to 51 nm of periodicity are obtained. Si templates are then used as a NIL master mould to pattern a thermoplastic resist. An ultra-high resolution hole-array is created on, a polymethyl-methacrylate (PMMA) substrate, where 10-nm Au nanoparticles are placed in each hole. The BCP-NIL method, presented here, is highly promising for the current semiconductor industry to build devices in the fields of opto-electronics, chemical sensors and energy conversion and storage. (C) 2015 Elsevier B.V. All rights reserved.