Abstract
A felicitous attempt has been attained to synthesize a novel ternary oxide InSbO3. The InSbO3 films have been grown via the chemical bath deposition (CBD) approach. X-ray diffraction (XRD) investigations presented the amorphous nature of as-deposited layers. The morphology, optical, and optoelectrical features have been scrutinized to recognize the film's essence. Films revealed the state of allowed indirect transition and the energy gaps were decreased from 4.08 eV to 3.46 eV via boosting the deposition time from 1 to 5 h. The good optical properties like the high transparency, wide energy gap, and n-type semiconducting behavior propose the possibility of employing our films in numerous optical implementations, especially in various display apparatus, and in thin-film solar cells as a promising window layer. Moreover, films exhibited high values of nonlinear optical parameters. Therefore, the InSbO3 films could also act as a promising material in nonlinear devices.