Abstract
Featuring shorter wavelengths and high photon energy, ultraviolet (UV) light enables many exciting applications including photolithography, sensing, high-resolution imaging, and optical communication. The conventional methods of UV light manipulation through bulky optical components limit their integration in fast-growing on-chip systems. The advent of metasurfaces promised unprecedented control of electromagnetic waves from microwaves to visible spectrums. However, the availability of suitable and lossless dielectric material for the UV domain hindered the realization of highly efficient UV metasurfaces. Here, a bandgap-engineered silicon nitride (Si
3
N
4
) material is used as a best-suited candidate for all-dielectric highly efficient UV metasurfaces. To demonstrate the wavefront manipulation capability of the Si
3
N
4
for the UV spectrum, we design and numerically simulate multiple all-dielectric metasurfaces for the perfect vortex beam generation by combing multiple phase profiles into a single device. For different numerical apertures (
N
A
=
0.3
and
0.7
), it is concluded that the diffracted light from the metasurfaces with different topological charges results in an annular intensity profile with the same ring radius. It is believed that the presented Si
3
N
4
materials and proposed design methodology for PV beam-generating metasurfaces will be applicable in various integrated optical and nanophotonic applications such as information processing, high-resolution spectroscopy, and on-chip optical communication.