Abstract
Metallic nanowires have significant importance in microelectronic circuits [
N. A. Melosh
,
Science
300
,
112
(
2003
)
], memory cells, optics [
X. Wu
,
Nature (London)
430
,
61
(
2004
)
], liquid crystal displays [
C. Lapointe
,
Science
303
,
652
(
2004
)
], and sensors [
R. C. Walter
,
Surf. Interface Anal.
34
,
409
(
2002
)
]. There are various methods for fabricating patterned nanostructures such as nanowires, but high cost, low throughput, and uniformity are still their major issues [
M. Hernandez-Velez
,
Thin Solid Films
495
,
51
(
2006
)
]. Therefore, a simple nanofabrication technique that uses existing microfabrication tool sets and methods to fabricate nanostructures such as nanowires with accuracy and flexibility is required. Here, the authors show use of a historically well-known method [
Z. Yu
,
J. Vac. Sci. Technol. B
21
,
2089
(
2003
)
] based on overetch triggered undercutting to fabricate thin film nanowires on a silicon wafer. For the first time, batch-fabricated metallic nanowire-titanium nitride (TiN)-on
200
mm
silicon wafers using highly selective, timed, isotropic dry etch is being reported. Use of conventional microfabrication in the author's demonstrated technique indicates the simplicity and economy of fabricating nanowires.