Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer

Journal article

Open access

Peer reviewed

Japanese Journal of Applied Physics, Vol.61(6), p.060906

01/06/2022

Abstract

GaN HEMTs

interfacial state density

stoichiometric Ga2O3 interlayer

url

https://doi.org/10.35848/1347-4065/ac6a32View

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Title: Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer
Creators - without role: Chuanju Wang - King Abdullah University of Science and Technology
Yi Lu - King Abdullah University of Science and Technology
Che-Hao Liao - King Abdullah University of Science and Technology
Shibin Chandroth - King Abdullah University of Science and Technology
Saravanan Yuvaraja - King Abdullah University of Science and Technology
Xiaohang Li - King Abdullah University of Science and Technology
Publication Details: Japanese Journal of Applied Physics, Vol.61(6), p.060906
Publisher: IOP Publishing
Number of pages: 5
Grant note: URF/1/3437-01-01; URF/1/3771-01-01; URF/1/4374-01-01 / URF BAS/1/1664-01-01 / KAUST Baseline
Identifiers: 9941687908331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article