- Title
- Hole-Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature
- Creators - without role
- Pichaya Pattanasattayavong - Imperial College LondonNir Yaacobi-Gross - Imperial College LondonKui Zhao - King Abdullah University of Science and TechnologyGuy Olivier Ngongang Ndjawa - King Abdullah University of Science and TechnologyJinhua Li - Hong Kong Polytechnic UniversityFeng Yan - Hong Kong Polytechnic UniversityBrian C. O'Regan - University of LondonAram Amassian - King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239556900, Saudi ArabiaThomas D. Anthopoulos - Imperial College London
- Publication Details
- Advanced materials (Weinheim), Vol.25(10), pp.1504-1509
- Publisher
- Wiley
- Number of pages
- 6
- Grant note
- EP/J001473/1 / Engineering and Physical Sciences Research Council (EPSRC); UK Research & Innovation (UKRI); Engineering & Physical Sciences Research Council (EPSRC) Cambridge Display Technology (CDT) EP/J001473/1 / Engineering and Physical Sciences Research Council; UK Research & Innovation (UKRI); Engineering & Physical Sciences Research Council (EPSRC) EP/J001473/1 / EPSRC; UK Research & Innovation (UKRI); Engineering & Physical Sciences Research Council (EPSRC) 280221 / European Research Council (ERC) AMPRO; European Research Council (ERC) Anandamahidol Foundation, Thailand
- Identifiers
- 9941074408331
- Academic Unit
- King Abdullah University of Science & Technology
- Language
- English
- Resource Type
- Journal article
Journal article
Hole-Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature
Advanced materials (Weinheim), Vol.25(10), pp.1504-1509
13/03/2013
PMID: 23280854
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