Hole trapping in reoxidized nitrided silicon dioxide

Journal article

Peer reviewed

Hole trapping in reoxidized nitrided silicon dioxide

Journal of applied physics, Vol.65(12), pp.4879-4883

15/06/1989

DOI: https://doi.org/10.1063/1.343202

Abstract

Charge carriers: generation, recombination, lifetime, and trapping

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Conductivity phenomena in semiconductors and insulators

Electronic transport in condensed matter

Exact sciences and technology

Physics

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Title: Hole trapping in reoxidized nitrided silicon dioxide
Creators - without role: G. J Dunn - Massachusetts Institute of Technology
Publication Details: Journal of applied physics, Vol.65(12), pp.4879-4883
Publisher: American Institute of Physics
Identifiers: 9924859008331
Academic Unit: Prince Mohammad Bin Fahd University
Language: English
Resource Type: Journal article