Abstract
High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm(2)/Vs was obtained along with an I-on/I-off ratio of 10(6). The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (+/- 4V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729787]