Abstract
Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (similar to 200 degrees C), and demonstrate excellent performance with high hole mobility of 2.7 cm(2) V-1 s(-1), large memory window of similar to 18 V, and a low sub-threshold swing similar to-4 V dec(-1). The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics. (C) 2014 Elsevier B.V. All rights reserved.