Abstract
In this paper, static measurements and defect analysis performed on InAlAs/InGaAs/InP HFETs are presented.
I
d–
V
ds–
T,
I
d–
V
gs–
T and
I
g–
V
gs–
T characteristics show anomalies (leakage current, degradation in saturation current, kink effect, distortions on
I
d–
V
d characteristics in saturation region after high voltage application, …). Deep defects analysis performed by means of capacitance transient spectroscopy (C-DLTS) and frequency dispersion of the output conductance (
G
ds(
f)) prove the presence of deep defects with activation energies ranging from 0.12 to 0.75
eV. The presence of generation–recombination centers, acting like traps, is confirmed by
I
g–
V
gs. The localization and the identification of these defects are presented. Finally, the correlation between the anomalies observed on output characteristics and defects is discussed.