Abstract
Transparent Conducting Indium Tin Oxide (ITO) thin films were deposited with Pulsed Laser Deposition PLD at 300 degrees C. The ITO films have small grain size of 22-26 nm, an average surface roughness of 5.5 nm and a high value transmission (95%) in the wavelength range from 300 to 700 nm with a low resistivity of 2.25 x 10(-4) Omega.cm. Spectral, structural and morphological properties were investigated for the films irradiated at low doses (5-25kGy). Improvement to the crystallinity was observed for the (ITO) films annealed at 300 degrees C and above with a slight decrease in the optical transmittance. Annealing greatly decreased the resistivity of the films. A lower resistivity and better spectra selectivity is a measurement of the quality and potential use of transparent ITO films for the application as anode electrodes for optoelectronic devices such as solar cells and organic light-emitting diodes.