Abstract
In this article, electrochemically as deposited and rapid thermal annealing in argon atmosphere of CuInSe2 thin films were investigated. The annealing treatments, for half an hour in argon atmosphere, were done at 250 degrees C, 300 degrees C and 350 degrees C. Structural and grain sizes, morphological surfaces and optical properties, of the as deposited and annealed CuInSe2 thin films of different heat treatments were compared. All elaborated thin films show the tetragonal chalcopyrite CuInSe2 with favored orientation along (112) direction. Grain seizes of the as deposited film was about 24.48 nm whereas the annealed thin film at 350 degrees C presents the high intensity of (112)peak with high grain size of 40.71mn. To support XRD and SEM results relating to the composition and quality of the as deposited and annealed CuInSe2 thin films, FT-IR spectroscopy investigation was used. It reveals a distinct absorption peaks nearly at 2332-2361cm(-1) conforming the CuInSe2 product. The band gap of the samples was found to be in 1.10-1.20eV range. As a result, RTP conditions of the films are found to be of interest in the process of CuInSe2 electro-deposition and its crystallinety enhancement. As active absorber layers for solar cell applications, those thin films may be used.