Abstract
This paper aims to present a detailed systematic approach to identify the main design parameters of PIN power diodes. Firstly, the diode physical parameters are initialized using simple analytical equations. The second phase is the optimization of the diode parameters considering PSPICE circuit simulation where an electro-thermal physically based circuit model is utilized depending on a series of dynamic and static measurements. The final optimization step is carried out by using TCAD simulations. First, the diode extracted parameters are used to virtually fabricate the diode by using a process simulator. Then, using the output of the process simulator, a device simulator is used to get the desired output that is validated against experimental data. Three case studies for different power diodes are presented showing a good agreement between circuit/device simulation results and measurements. The presented methodology provides high accuracy like TCAD-based parameter extraction procedure with less time. In addition, it gives higher accuracy than the widely used circuit-based parameter extraction technique. (C) 2021 THE AUTHORS. Published by Elsevier BV on behalf of Faculty of Engineering, Ain Shams University.d by Elsevier B.V.