Abstract
This paper investigates the effects of hot carrier injection on the switching performance of power RF LDMOS (Radio Frequency Lateral Diffused Metal–Oxide–Semiconductor) devices. In addition, their influences on the dynamic parameters are studied after various accelerated aging tests (thermal and electrical). The response of these parameters and the switching waveform are described. The findings of experimental results are presented and discussed. Measurements show that important variations are obtained on the devices' rise time. After aging tests, the charge trapping in the gate oxide causes the modifications in the Miller capacity level and width resulting in an increase of the rise time and a decrease in the fall time, consequently increasing of the switching losses.
•This paper investigates the effects of hot carrier injection on the switching performance of power RF LDMOS (Radio Frequency Lateral Diffused Metal–Oxide–Semiconductor) devices.•In addition, their influences on the dynamic parameters are studied after various accelerated ageing tests (thermal and electrical).•The response of these parameters and the switching waveform are described.•Stressing that, during one switching period, the rise time degradation is faster and more important than fall time and the gate oxide of the devices is subjected to a high field in order to induce defects in the oxide layer and/or at the Si/SiO2 interface.•This phenomenon degrades the physical behaviour of device, thereafter the critical dynamic parameters (Cgd and Crss); that are sensitive to the electrons injected in gate/SiO2 interface traps.