Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes

Journal article

Open access

Peer reviewed

Mh Hadj Alouane, B. Ilahi, H. Maaref, B. Salem, V. Aimez, D. Morris, A. Turala, P. Regreny, M. Gendry and Mohamed Helmi Hadj Alouane

Journal of applied physics, Vol.108(2), pp.108 (2), art. no. 024317-024317-5

15/07/2010

Abstract

Engineering Sciences

Micro and nanotechnologies

Microelectronics

url

https://doi.org/10.1063/1.3460646View

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Title: Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes
Creators - without role: Mh Hadj Alouane - INL - Spectroscopies et Nanomatériaux
B. Ilahi - University of Monastir
H. Maaref - University of Monastir
B. Salem - Université de Sherbrooke
V. Aimez - Université de Sherbrooke
D. Morris - Université de Sherbrooke
A. Turala - Institut des Nanotechnologies de Lyon
P. Regreny - Institut des Nanotechnologies de Lyon
M. Gendry - École Centrale de Lyon
Mohamed Helmi Hadj Alouane - King Faisal University
Publication Details: Journal of applied physics, Vol.108(2), pp.108 (2), art. no. 024317-024317-5
Publisher: American Institute of Physics
Identifiers: 9919843208331
Academic Unit: King Faisal University
Language: English
Resource Type: Journal article