Abstract
As the technology advances to the nanoscale, advanced Tunnel Field-Effect Transistors are very prominent as a part of integrated circuits in the present trend. Advanced Tunnel FET devices have many advantages over conventional Metal Oxide Semiconductor Field Effect Transistor and conventional Metal Semiconductor Field Effect Transistor on their various performance parameters. III-V bandgap semiconductors such as Gallium Arsenide (GaAs), Silicon dioxide (SiO2), Silicon Carbide (SiC) for which Gallium Nitride (GaN) semiconductor material has excellent potential to attract drain current characteristics and electrical characteristics of the proposed device as Dual Pocket-TFET by its wideband gap, high electron mobility, high electric field strength, high thermal conductivity. The dual pocket Tunnel FET have many improved performance parameters which include lower Sub-threshold Swing (SS), lower leakage current, Higher ON current, and higher I-on/I-off ratio. Various architectures of Tunnel FETs have been found in recent submicron technology; however, vertical Gallium Arsenide and Silicon dioxide-based proposed dual pocket tunnel FET devices are suitable in high power applications with their excellent performance parameters.