Abstract
Construction and characterization of P-N junction photodiodes have attracted the attention of researchers for past few decades as they play an important role in energy applications. The thin film samples Ag doped Bi2S3 nanowires deposited on ITO substrates with different dopant percentage using dip coating method are characterized with XRD and SEM to investigate their structure, degree of crystallinity and morphology. Ag doped Bi2S3/ ITO photodiodes are fabricated, and their performance is studied and reported. The I-V characteristic graphs show an increase in photocurrent with increasing illumination time. The ideality factor of the diode is calculated to be 6.21 by J-V method under illumination of light for 30 min.