Abstract
Terbium co-doped CdO:Zn thin films have been coated by the facile and an efficient spray pyrolysis technique on the substrate of glass to tune its optical and electrical properties. From XRD analysis, all the diffraction peaks strongly exhibit polycrystalline nature with perfect cubic structure followed by preferential orientation was changed from (111) plane to (200) plane. The nature of the crystal structure and crystallite size is reduced from 20.4 to 16.5 nm by increasing Tb doping concentration due to defects in the lattice. The atomic force microscope AFM mages clearly show that the film's grain size decreases with the Tb dopant. The elements such as Cd, Zn, O, and Tb exists in the elemental mapping and EDS spectra. The transmittance is varied from 70, to 82% at 800 nm, and the maximum bandgap of 3.06 eV is observed for 1.5 wt.% degenerate doping concentration. PL emission at 435 nm shows a high intense peak attribute to the crystalline quality of the film. The electrical property of the film has been greatly improved with doping concentration, which is useful for optoelectronic devices. The TCO based on the 1.5 wt.% Tb co-doped CdO:Zn film shows an improved performance (higher transmission of 82%, lowest resistivity of 7.48 x 10(-4) Omega cm, the highest carrier concentration of 11.3x10(20) cm(-3)). These results propose a much simpler route to achieve high-quality Terbium co-doped CdO:Zn thin films for TCO applications.