Improvement in Electrical Properties of Laser Annealed Ion Implanted GaAs : A-3: LASER ANNEALING/SOS DEVICES

Journal article

Peer reviewed

BADAWI M. H, SEALY B. J, STEPHENS K. G, AKINTUNDE J. A and M. Badawi

Japanese journal of applied physics. Supplement, Vol.19, pp.139-143

30/04/1980

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Title: Improvement in Electrical Properties of Laser Annealed Ion Implanted GaAs : A-3: LASER ANNEALING/SOS DEVICES
Creators - without role: BADAWI M. H
SEALY B. J
STEPHENS K. G
AKINTUNDE J. A
M. Badawi - Imam Abdulrahman Bin Faisal University
Publication Details: Japanese journal of applied physics. Supplement, Vol.19, pp.139-143
Publisher: 社団法人応用物理学会
Identifiers: 9915658008331
Academic Unit: Imam Abdulrahman Bin Faisal University
Language: English
Resource Type: Journal article