Abstract
Improving electrical properties is imperative for advancement in field-effect transistors (FET). This work offers a doping approach to enhance the electrical performance of multilayer (ML) WSe
2
FETs. The deep ultraviolet (DUV) light with 220 nm wavelength was directed to the sample of WSe
2
in the presence of nitrogen N
2
gas, which acted as the gas dopant. After 20 min of DUV + N
2
exposure, device performance, such as mobility, charge carrier density, and current I
on
/I
off,
was improved. The WSe
2
FET’s threshold voltage was shifted to −72 V by indicating the n-doping of N
2
. Furthermore, the device is characterized by Raman spectroscopy, the peaks A
1g
and E
1
2g
shifted towards the lower wavenumber, which revealed the
n
-type doping. As a result, this technique provides a very effective, stable, and simple method to enhance WSe
2
FET performance for solar cell materials and their related electronic applications.