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In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories
Journal article   Peer reviewed

In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

Yuanyuan Shi, Yanfeng Ji, Fei Hui, Montserrat Nafria, Marc Porti, Gennadi Bersuker and Mario Lanza
Advanced electronic materials, Vol.1(4), pp.1400058-n/a
01/04/2015
DOI: https://doi.org/10.1002/aelm.201400058

Abstract

Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Science & Technology Science & Technology - Other Topics Technology
The link between resistive switching and mechanical strength is probed in situ by using a combination of nanoscale electronic and mechanical tests. In HfO2-based non-volatile memories, reversible conductive filaments only form at mechanically weak sites. Defective bonding allows easy defect formation and less dramatic forming process, which is essential to allow conductive filament disruption.

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