Abstract
A systematic structural analysis of
a-plane InGaN/GaN was performed using electron diffraction, high-resolution transmission electron microscopy (HRTEM), and energy-dispersive X-ray spectroscopy. From the results of local structural analysis using Fourier diffractograms of HRTEM images, it was found that
a-plane InGaN/GaN exhibits coherent epitaxial growth and a slight tilt of the growth direction between the GaN and InGaN layers. Furthermore, the In concentration and tilt angle increase simultaneously with increasing distance from the InGaN/GaN interface.